Design of a minimum drift characteristic for differential MOSFET amplifier

Author

Rizkalla, Maher E. ; Holdmann, Michael M.

Author_Institution

Dept. of Electr. Eng., Purdue Univ., Indianapolis, IN, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

3234

Abstract

The temperature drift of a MOSFET differential amplifier circuit is studied to determine the biasing conditions necessary for operation at zero temperature coefficient. Previously developed theoretical expressions are used to calculate the corresponding currents and voltages. Employing a model of type BFR84 n-channel depletion MOSFETs, the program PSPICE is used to determine the optimum values of the circuit components. Experimental results over a wide range of temperatures show close agreement with those obtained from PSPICE circuit simulations. Two methods for minimizing drift are investigated. A biasing method results in a drift of ≃25 μV°C over the range 30°C to 60°C. Using microprocessor control circuits a drift of ≃10 μV°C is obtained over the range of 30°C to 90°C

Keywords

circuit CAD; differential amplifiers; field effect transistor circuits; linear network synthesis; 30 to 90 degC; biasing conditions; differential MOSFET amplifier; microprocessor control circuits; minimum drift characteristic; n-channel depletion MOSFETs; program PSPICE; temperature drift; type BFR84; zero temperature coefficient; Circuit simulation; Differential amplifiers; Equations; Erbium; Independent component analysis; MOSFET circuits; Microcomputers; SPICE; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112700

Filename

112700