DocumentCode
2668423
Title
Reliability of active RF filters in nanoscale region
Author
Xiao, Enjun
Author_Institution
Dept. of Electr. Eng., Texas Univ., Arlington, TX
fYear
2006
fDate
5-7 Sept. 2006
Firstpage
101
Lastpage
104
Abstract
Hot carrier effect on active RF filter performance is studied systematically for 0.16 mum CMOS technology. Active inductor based RF filter can be used for RF and IF filters in wireless communications. Hot carrier interface state generation (HCI) and time-dependent dielectric breakdown (TDDB) effects degrade the device parameters, and in turn degrade the performance of the active inductors and filters. A band-pass filter centered at 1.8 GHz is designed and the HCI and TDDB effects are investigated
Keywords
CMOS integrated circuits; UHF filters; active filters; band-pass filters; circuit reliability; electric breakdown; hot carriers; 0.16 micron; 1.8 GHz; CMOS technology; UHF filters; active filters; band-pass filters; circuit reliability; hot carrier effect; time-dependent dielectric breakdown; wireless communications; Active filters; Active inductors; Band pass filters; CMOS technology; Degradation; Hot carrier effects; Hot carriers; Human computer interaction; Radio frequency; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location
Tunis
Print_ISBN
0-7803-9726-6
Type
conf
DOI
10.1109/DTIS.2006.1708668
Filename
1708668
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