Electron-polariton scattering in n-doped semiconductor microcavities

Summary form only given. In semiconductor microcavities, electron-polariton scattering has been proposed as an efficient process that can drive polaritons from the bottleneck region to the ground state, achieving Bose amplification of the optical emission. We present first experimental observation of this process in a structure that allows control of electron density. A substantial enhancement of photoluminescence is also reported under the optimal configuration. We show that this enhancement is more effective at higher temperatures due to the different way that the dispersion relation controls electron scattering processes that either broaden or relax polaritons.