Low-power high-linearity 0.13-µm CMOS WCDMA receiver front-end

Author

Phan, Anh Tuan ; Han, Seok-Kyun ; Lee, Sang-Gug

Author_Institution

Inst. of Microelectron. & Wireless Syst., Nat. Univ. of Ireland Maynooth (NUIM), Maynooth, Ireland

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

1192

Lastpage

1195

Abstract

This paper presents a low-power high-linearity variable gain WCDMA receiver (Rx) front-end. The Rx front-end consists of a variable gain low noise amplifier (LNA) and a folded double balanced mixer. By enhancing the substrate resistance of a common gate transistor of LNA along with adopting multiple-gate technique, the linearity is significantly improved. Multiple-gate transistor technique is also adopted in g_m stage of the I/Q mixer to improve the linearity. The receiver is designed based on direct conversion architecture in 0.13-μm CMOS process from 1.2 V supply. The high gain mode shows 37dB of voltage gain with 1.16dB of NF. The Rx front-end achieves -4.2dBm of IIP3 while consumes 8.9mW. The active size is 600 × 380 μm².

Keywords

CMOS analogue integrated circuits; code division multiple access; low noise amplifiers; mixers (circuits); radio receivers; CMOS WCDMA receiver front-end; CMOS process; I-Q mixer; LNA; common gate transistor; direct conversion architecture; folded double-balanced mixer; gain 37 dB; low-power high-linearity; multiple-gate transistor technique; noise figure 1.16 dB; power 8.9 mW; size 0.13 mum; substrate resistance; variable gain low noise amplifier; variable gain receiver front-end; voltage 1.2 V; wideband code division multiple access; CMOS integrated circuits; Gain; Logic gates; Mixers; Multiaccess communication; Noise measurement; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on

Conference_Location

Athens

Print_ISBN

978-1-4244-8155-2

Type

conf

DOI

10.1109/ICECS.2010.5724731

Filename

5724731