Analysis of CNTFET physical compact model

Author

Maneux, C. ; Goguet, J. ; Frégonèse, S. ; Zimmer, T. ; Honincthun, H. Cazin d ; Galdin-Retailleau, S.

Author_Institution

ENSEIRB, Bordeaux Univ., Talence

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

40

Lastpage

45

Abstract

On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the DC characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits

Keywords

carbon nanotubes; equivalent circuits; field effect transistors; nanotube devices; semiconductor device models; CNT helicity; CNT radius; CNTFET; DC characteristics; analogical function; ballistic 1D theory; carbon nanotube field-effect transistor; compact modeling; doping profile; energy conduction subbands minima; logical function; CNTFETs; Carbon nanotubes; Chemical elements; Circuit simulation; Doping profiles; MOSFET circuits; Nanoelectronics; Semiconductivity; Semiconductor process modeling; Carbon nanotubes FET (CNTFET); ballistic 1-D theory; compact modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on

Conference_Location

Tunis

Print_ISBN

0-7803-9726-6

Type

conf

DOI

10.1109/DTIS.2006.1708733

Filename

1708733