• DocumentCode
    2670558
  • Title

    2-18 GHz, High-Efficiency, Medium-Power GaAs FET Amplifiers

  • Author

    Nelson, S.R. ; Macksey, H.M.

  • fYear
    1981
  • fDate
    15-19 June 1981
  • Firstpage
    31
  • Lastpage
    33
  • Abstract
    A GaAs FET amplifier using a 600 mu m gate width device has achieved ~ 300 mW output with 20-25% power-added efficiency across 2 to 18 GHz. With a 1350 mu m FET, 0.5 W output power was obtained from 7 to 16.5 GHz. Extending its large-signal performance to 2 GHz appears feasible.
  • Keywords
    Broadband amplifiers; FETs; Frequency; Gain; Gallium arsenide; Inductance; Laboratories; Operational amplifiers; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1981 IEEE MTT-S International
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1981.1129810
  • Filename
    1129810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2670558