DocumentCode
2670568
Title
Ultrafast carrier trapping in amorphous semiconductors studied by time-resolved THz spectroscopy
Author
Vasudevan Nampoothiri, A.V. ; Nelson, B.P. ; Dexheimer, S.L.
Author_Institution
Dept. of Phys., Washington State Univ., Pullman, WA, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We present studies of the ultrafast carrier response in amorphous silicon (a-Si:H) and related materials using time-resolved THz techniques. We find that the initial carrier processes are consistent with trapping on a picosecond time scale.
Keywords
amorphous semiconductors; carrier mobility; electron traps; elemental semiconductors; hydrogen; silicon; submillimetre wave spectra; time resolved spectra; Si:H; amorphous semiconductors; picosecond time scale; time-resolved THz spectroscopy; ultrafast carrier trapping; Amorphous semiconductors; Optical materials; Optical pulse generation; Optical pumping; Optical refraction; Probes; Pulse measurements; Semiconductor materials; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.237804
Filename
1276319
Link To Document