Breakdown voltage walkout effect in ESD protection devices

Author

LaFonteese, D.J. ; Vashchenko, V.A. ; Korablev, K.G.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

2009

fDate

26-30 April 2009

Firstpage

659

Lastpage

662

Abstract

Using experimental and numerical simulation analysis the breakdown voltage walkout effect has been studied in 40 V ESD protection devices based on extended drain MOS devices implemented in a 5 V CMOS process. A similar effect has been observed in 100 V and 24 V BiCMOS processes. The physical mechanism of this effect is revealed as the result of hot electron capture in the thick field oxide of the extended drain region. To address this, a method to reduce the walkout effect in high voltage ESD devices is proposed and experimentally validated.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MOSFET; electrostatic discharge; hot carriers; semiconductor device breakdown; BiCMOS process; CMOS process; ESD protection device; breakdown voltage walkout effect; drain region; extended drain MOS device; hot electron capture; voltage 100 V; voltage 24 V; voltage 40 V; voltage 5 V; BiCMOS integrated circuits; Breakdown voltage; CMOS process; Clamps; Current measurement; Electrostatic discharge; Protection; Pulse measurements; Thyristors; Transmission line measurements; ESD; breakdown; hot carrier degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2009 IEEE International

Conference_Location

Montreal, QC

ISSN

1541-7026

Print_ISBN

978-1-4244-2888-5

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2009.5173325

Filename

5173325