• DocumentCode
    2671792
  • Title

    Latchup test failure from ESD protection circuit activation beyond ESD stress condition

  • Author

    Lin, I-Cheng ; Jao, Che-Yuan ; Huang, Rei-Fu ; Chien, Cheng-Hsing ; Chuang, Chien-Hui ; Chiang, Chen-Feng ; Huang, Bo-Shih

  • Author_Institution
    Intellectual Property Dept., Media Tek Inc., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    26-30 April 2009
  • Firstpage
    760
  • Lastpage
    763
  • Abstract
    Latchup test failures occurred at two IO pins of an IC. Failure analysis revealed damage at the ESD device of a neighboring power pin´s ESD protection circuit. To identify the root cause of the problem, the behavior of the ESD circuit in response to the latchup trigger signal was monitored. The ESD protection circuit was found to anomalously respond to even DC-like latchup trigger pulses. A layout and circuit study identified a possible rare failure mode and subsequent experiments validated the suspected failure mechanism. A simple circuit modification successfully solved the issue without affecting discharge characteristic and ESD performance of the IC.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit layout; integrated circuit testing; CMOS technology; DC-like latchup trigger pulses; ESD device; ESD protection circuit; circuit layout; failure analysis; latchup test; Circuit testing; Condition monitoring; Electrostatic discharge; Failure analysis; Integrated circuit testing; Pins; Protection; Pulse circuits; Signal processing; Stress; ESD; circuit (keywords); latchup test;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2009 IEEE International
  • Conference_Location
    Montreal, QC
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-2888-5
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2009.5173345
  • Filename
    5173345