DocumentCode
2671792
Title
Latchup test failure from ESD protection circuit activation beyond ESD stress condition
Author
Lin, I-Cheng ; Jao, Che-Yuan ; Huang, Rei-Fu ; Chien, Cheng-Hsing ; Chuang, Chien-Hui ; Chiang, Chen-Feng ; Huang, Bo-Shih
Author_Institution
Intellectual Property Dept., Media Tek Inc., Hsinchu, Taiwan
fYear
2009
fDate
26-30 April 2009
Firstpage
760
Lastpage
763
Abstract
Latchup test failures occurred at two IO pins of an IC. Failure analysis revealed damage at the ESD device of a neighboring power pin´s ESD protection circuit. To identify the root cause of the problem, the behavior of the ESD circuit in response to the latchup trigger signal was monitored. The ESD protection circuit was found to anomalously respond to even DC-like latchup trigger pulses. A layout and circuit study identified a possible rare failure mode and subsequent experiments validated the suspected failure mechanism. A simple circuit modification successfully solved the issue without affecting discharge characteristic and ESD performance of the IC.
Keywords
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit layout; integrated circuit testing; CMOS technology; DC-like latchup trigger pulses; ESD device; ESD protection circuit; circuit layout; failure analysis; latchup test; Circuit testing; Condition monitoring; Electrostatic discharge; Failure analysis; Integrated circuit testing; Pins; Protection; Pulse circuits; Signal processing; Stress; ESD; circuit (keywords); latchup test;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173345
Filename
5173345
Link To Document