DocumentCode
2671818
Title
Spin relaxation in [110] and [001] InAs/GaSb superlattices
Author
Gundogdu, K. ; Hall, K.C. ; Lau, W.H. ; Flatte, M.E. ; Boggess, T.F. ; Zinck, J.J. ; Barvosa-Carter, B. ; Skeith, S.L.
Author_Institution
Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA
fYear
2003
fDate
6-6 June 2003
Abstract
A 25 times enhancement of the electron spin lifetime is observed in a [110] InAs/GaSb superlattice relative to the corresponding [001] superlattice, an effect that is primarily attributed to suppression of native interface asymmetry.
Keywords
III-V semiconductors; electron relaxation time; gallium compounds; high-speed optical techniques; indium compounds; interface states; semiconductor superlattices; InAs-GaSb; InAs/GaSb superlattices; electron spin lifetime; native interface asymmetry; spin relaxation; Cities and towns; Delay; Electron optics; Extraterrestrial measurements; High speed optical techniques; Laboratories; Magnetoelectronics; Polarization; Semiconductor superlattices; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238058
Filename
1276390
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