DocumentCode
2672368
Title
The role of nitrogen in HfSiON defect passivation
Author
Connor, R.O. ; Aoulaiche, M. ; Pantisano, L. ; Shickova, A. ; Degraeve, R. ; Kaczer, B. ; Groeseneken, G.
Author_Institution
IMEC Leuven, Leuven, Belgium
fYear
2009
fDate
26-30 April 2009
Firstpage
921
Lastpage
924
Abstract
In this work we examine the effect of nitrogen incorporation on the defect generation behavior in HfSiON gate dielectric layers. We show that nitrogen effectively passivates pre-existing defects in the HfSiO, but the effect is quickly reversed during stress leading to high levels of SILC and NBTI.
Keywords
MOSFET; dielectric materials; hafnium compounds; leakage currents; nitrogen; passivation; thermal stability; HfSiON; MOSFET; NBTI; SILC; defect passivation; gate dielectric layers; leakage current; nitrogen effect; preexisting defects; Annealing; Degradation; High-K gate dielectrics; MOSFETs; Niobium compounds; Nitrogen; Passivation; Plasma measurements; Stress; Titanium compounds; Hafnium silicate; MOSFET; NBTI; SILC; dielectric; nitrogen;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2009 IEEE International
Conference_Location
Montreal, QC
ISSN
1541-7026
Print_ISBN
978-1-4244-2888-5
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2009.5173381
Filename
5173381
Link To Document