Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications

Author

Chou, Y.C. ; Leung, D. ; Lai, R. ; Chen, Y.C. ; Li, G.P. ; Barsky, M. ; Wu, C.S. ; Liu, P.H. ; Scarpulla, J. ; Streit, D.C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

35715

Firstpage

62

Lastpage

64

Abstract

Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 μm low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device reliability; 0.1 micron; InAlAs-InGaAs-InP; InAlAs/InGaAs/lnP HEMT; MMIC LNA; high temperature lifetesting; low power technology; millimeter wave application; noise; reliability; reverse gate bias stress; transceiver; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; MODFETs; Millimeter wave technology; Noise robustness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1997., Proceedings

Conference_Location

Anaheim, CA

Print_ISBN

0-7908-0064-0

Type

conf

DOI

10.1109/GAASRW.1997.656127

Filename

656127