DocumentCode
2674314
Title
Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs
Author
Sharma, G. ; Hafez, H. ; Al-Naib, I. ; Morandotti, R. ; Ozaki, T.
Author_Institution
Adv. Laser Light Source, Univ. du Quebec, Varennes, QC, Canada
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.
Keywords
III-V semiconductors; carrier density; gallium arsenide; high-frequency effects; optical pumping; GaAs; THz-induced nonlinearity; THz-probe method; electron carrier density; intervalley-scattering-based model; nonlinear response; optical-pump method; photoexcited gallium arsenide; terahertz fields; Charge carrier density; Charge carrier processes; Gallium arsenide; Nonlinear optics; Optical pulses; Optical pumping; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6105005
Filename
6105005
Link To Document