Carrier dynamic measurement of Be doped multi-quantum-well InGaAs-InAlAs material systems at 1550 nm for THz applications

Author

Saeedkia, D. ; Kostakis, I. ; Missous, M.

Author_Institution

T-Era Consulting, Waterloo, ON, Canada

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

2

Abstract

Carrier dynamic for Be doped multi-quantum-well InGaAs-InAlAs material systems are measured using an infrared pump-probe measurement system at 1550 nm wavelength range. The carrier life-time for as-grown materials and for materials with two different levels of Be doping annealed at different temperatures are measured and the results are compared. Subpicosecond carrier lifetimes are obtained.

Keywords

III-V semiconductors; aluminium compounds; annealing; beryllium; carrier lifetime; doping profiles; gallium arsenide; high-speed optical techniques; indium compounds; optical pumping; semiconductor doping; semiconductor quantum wells; InGaAs-InAlAs:Be; annealing; carrier dynamic property; doping levels; infrared pump-probe measurement; multiquantum-well material; subpicosecond carrier lifetimes; wavelength 1550 nm; Annealing; Doping; Materials; Measurement by laser beam; Probes; Temperature measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105007

Filename

6105007