Hydrogen effects on GaAs microwave semiconductors

Author

Ragle, Dwayne ; Kayali, Sammy

Author_Institution

Shason Microwave Corp., Houston, TX, USA

fYear

1997

fDate

35715

Firstpage

66

Lastpage

71

Abstract

This presentation will describe and summarize a report which documents all published hydrogen effects work performed through 1997. The report is based on a literature search for hydrogen effects on GaAs devices and interviews with several persons noted for their work on this problem, and is a compilation of hydrogen effects data and references in a single document. Included in the presentation will be an outline of the problem history, a summary and comparison of failure effects observed on devices (MESFET, PHEMT, and InP HEMT), a review of hydrogen sources in hermetic packages, proposed solutions to the problem and recommendations for use of these devices in space and other high reliability applications

Keywords

III-V semiconductors; gallium arsenide; hydrogen; microwave field effect transistors; semiconductor device packaging; semiconductor device reliability; GaAs; GaAs microwave semiconductor; H₂; HEMT; MESFET; PHEMT; failure; hermetic package; hydrogen gas; reliability; space device; Drives; Gallium arsenide; Hydrogen; Integrated circuit packaging; Laboratories; MMICs; Monolithic integrated circuits; NASA; Propulsion; Semiconductor device packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs Reliability Workshop, 1997., Proceedings

Conference_Location

Anaheim, CA

Print_ISBN

0-7908-0064-0

Type

conf

DOI

10.1109/GAASRW.1997.656128

Filename

656128