DocumentCode
2674647
Title
Sub-micron quantum cascade transistor
Author
Van, H. Nguyen ; Moreno, J.C. ; Baranov, A.N. ; Zaknoune, M. ; Teissier, R.
Author_Institution
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
fYear
2011
fDate
2-7 Oct. 2011
Firstpage
1
Lastpage
2
Abstract
A sub-micron process for the fabrication of an original unipolar vertical transport transistor is reported. This allowed suppressing parasitic resistances and achieving high current densities required for THz frequency operation.
Keywords
III-V semiconductors; aluminium compounds; current density; indium compounds; transistors; InAs-AlSb; THz frequency operation; current density; parasitic resistances suppression; submicron quantum cascade transistor; unipolar vertical transport transistor; Current density; Fabrication; Heterojunction bipolar transistors; Quantum cascade lasers; Resistance; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on
Conference_Location
Houston, TX
ISSN
2162-2027
Print_ISBN
978-1-4577-0510-6
Electronic_ISBN
2162-2027
Type
conf
DOI
10.1109/irmmw-THz.2011.6105027
Filename
6105027
Link To Document