• DocumentCode
    267465
  • Title

    High voltage-gain boost DC-DC converter with tapped-inductor

  • Author

    Quang, T.-N. ; Chiu, H.-J. ; Lo, Y.-K. ; Yang, C.-Y. ; Hong-Bo Ma

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2014
  • fDate
    5-8 Nov. 2014
  • Firstpage
    1519
  • Lastpage
    1525
  • Abstract
    This study presents a novel topology named high voltage-gain boost DC-DC converter with tapped-inductor. The proposed topology provides a high voltage-gain and low input current ripple which are suitable for alternative power sources such as PV and fuel-cell applications. The interleaved control mode can be used to reduce input and output filtering. Moreover, the voltage stress on MOSFETs are clamped, resulting of low on-resistance (RDS(ON)) MOSFET usage to improve efficiency. Addition to providing circuit operation and analysis with symmetric control and interleaved control modes, a simulation and laboratory prototype of the proposed topology was built and inspected under 15-28 V input, 400 V/250 W output and 100 kHz switching frequency. The results showed that the proposed circuit achieved low voltage spikes on MOSFETs. Low RDS(ON) MOSFETs were used to improved efficiency. For interleaved control mode, the input current ripple and output voltage ripple were low, requiring smaller input and output filtering.
  • Keywords
    DC-DC power convertors; MOSFET; inductors; network topology; power supply quality; MOSFET; current ripple; filtering reduction; high voltage-gain boost DC-DC converter topology; interleaved control mode; switching frequency; symmetric control; tapped-inductor; voltage spike; voltage stress; Capacitors; Inductors; Integrated circuit modeling; MOSFET; Topology; Voltage control; Windings; boost DC-DC converter; high voltage-gain converter; non-isolated converter; tapped inductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Application Conference and Exposition (PEAC), 2014 International
  • Conference_Location
    Shanghai
  • Type

    conf

  • DOI
    10.1109/PEAC.2014.7038091
  • Filename
    7038091