Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon

Author

Tishkovsky, Eugene G. ; Obodnicov, Vladimir I. ; Zabagonsky, Yaroslav V.

Author_Institution

Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2009

fDate

1-6 July 2009

Firstpage

12

Lastpage

16

Abstract

It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated-the distance in the planar plain between electrode and the junction line must be greater than the punch-through length.

Keywords

avalanche breakdown; avalanche diodes; p-n junctions; semiconductor device breakdown; semiconductor device models; silicon; 2D-simulation; SiJkJk; avalanch multiplication; electrode; model diodes; planar p-n junction; positive charge carriers; premature avalanch multiplication; premature breakdown; punch-through; Detectors; Diodes; Electric breakdown; Hydrodynamics; Impact ionization; P-n junctions; Seminars; Silicon; Thyristors; Voltage; Avalanch diode; breakdown; carrier multiplication; p-n junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-4571-4

Type

conf

DOI

10.1109/EDM.2009.5173914

Filename

5173914