DocumentCode
2675479
Title
Modeling of through diffusion profile in the volume of silicon substrate
Author
Perov, Gennady V. ; Kusnetsov, Dmitry O.
Author_Institution
Siberian State Univ. of Telecommun. & Inf., Novosibirsk, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
47
Lastpage
47
Abstract
1-D model of doping diffusion in silicon from limited source on planar and non-planar side of silicon substrate with taking into attention the segregation of doping on the interface with blocking oxide is developed. A conditions for controlling the parameters of profiles in the depth of the silicon substrate is defined.
Keywords
diffusion; elemental semiconductors; segregation; semiconductor doping; silicon; 1-D model; Si; diffusion; doping; segregation; silicon substrate; Doping profiles; Informatics; Semiconductor device doping; Semiconductor process modeling; Seminars; Silicon; Software performance; Substrates; Temperature distribution; Transmission line matrix methods; Silicon; model of diffusion of substance; substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5173925
Filename
5173925
Link To Document