DocumentCode
2675924
Title
Modeling of tot al dose radiation effect of RF PD SOI-MOSFET using Sentaurus TCAD
Author
Krasukov, Anton Y. ; Mansurov, Anton N.
Author_Institution
Moscow Inst. of Electron. Eng. (MIEE), Moscow, Russia
fYear
2009
fDate
1-6 July 2009
Firstpage
139
Lastpage
140
Abstract
An investigation of characteristics of partially depleted are - type SOI-MOSFET transistors is performed using Sentaurus TCAD and presented here. It is shown that such devices can operated as amplifiers for the frequencies of above 2 GHz. More over it was found that such devices are stable against influence of collected radiation.
Keywords
MOSFET; amplifiers; radiation effects; silicon-on-insulator; RF PD SOI-MOSFET transistors; Sentaurus TCAD; Si; amplifiers; dose radiation effect; Circuit simulation; Integrated circuit layout; Leakage current; MOSFET circuits; Performance gain; Radiation effects; Radio frequency; Single event upset; Threshold voltage; Very large scale integration; MOSFET; SOI; TCAD simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices, 2009. EDM 2009. International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-4571-4
Type
conf
DOI
10.1109/EDM.2009.5173951
Filename
5173951
Link To Document