DocumentCode
2676499
Title
Efficient Low-Noise Three Port X-Band FET Oscillator Using Two Dielectric Resonators.
Author
Khanna., A.P.S. ; Obregon, J. ; Garault, Y.
fYear
1982
fDate
15-17 June 1982
Firstpage
277
Lastpage
279
Abstract
A new, simple to realize, X band, 3 port stable FET oscillator is presented. The oscillator using 2 identical dielectric resonators as oscillator circuit elements, operates at 8.53 GHz, has an overall efficiency of 22% and FM noise better than 0.2 Hz/ /spl radic/Hz at 10 KHz from carrier.
Keywords
Circuit noise; Coupling circuits; Dielectrics; FETs; Feedback; Impedance; Microstrip components; Microstrip resonators; Oscillators; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130689
Filename
1130689
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