DocumentCode
2676551
Title
A 45 GHz GaAs FET MIC Oscillator-Doubler
Author
Saito, T. ; Iwakuni, M. ; Sakane, T. ; Tokumitsu, Y.
fYear
1982
fDate
15-17 June 1982
Firstpage
283
Lastpage
285
Abstract
A 45 GHz MIC oscillator-doubler usinq the gate-to-drain nonlinearity of a common-drain GaAs FET has been investigated . This oscillator-doubler has a hiqh output power of 11.6 dBm, a high doubler efficiency of 9 dB and a high power efficiency of 1.6%.
Keywords
Dielectrics; Frequency; Gallium arsenide; Impedance; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Power generation; Power system harmonics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130691
Filename
1130691
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