DocumentCode
2676568
Title
X-Band Burnout Characteristics Of GaAs MESFETS
Author
Whalen, J.J. ; Kemerley, R.T.
fYear
1982
fDate
15-17 June 1982
Firstpage
286
Lastpage
288
Abstract
X-Band microsecond pulse, millisecond pulse, and CW burnout data have been measured for GaAs MESFETs. Values of incident pulse power required to cause burn-out are presented and discussed.
Keywords
Bonding; Gallium arsenide; Laboratories; MESFETs; Microwave devices; Noise figure; Power system protection; Pulse amplifiers; Pulse measurements; Radar antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1982 IEEE MTT-S International
Conference_Location
Dallas, TX, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1982.1130692
Filename
1130692
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