DocumentCode
2676586
Title
Memory effects in ferroelectric thick film varactors based on Barium Strontium Titanate
Author
Maune, H. ; Sazegar, M. ; Zheng, Y. ; Jakoby, R.
Author_Institution
Microwave Eng., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear
2011
fDate
16-19 Jan. 2011
Firstpage
134
Lastpage
137
Abstract
Low cost planar ferroelectric thick film varactors based on Barium Strontium Titanate (BST) are realized and their nonlinear behavior with varying DC bias is investigated. A model for the capacitance tunability is utilized for nonlinear simulations and compared to measurements. The model based on static measurement of the varactor´s capacity is extended by the results from measurements with pulsed tuning voltage. A memory effect in the capacitance tunability of the varactor is observed in measurements with pulsed bias voltage. The impact of this memory effect to the nonlinear properties is presented.
Keywords
barium compounds; ferroelectric capacitors; strontium compounds; thick film devices; varactors; BST; barium strontium titanate; capacitance tunability; memory effects; nonlinear simulations; planar ferroelectric thick film varactors; pulsed tuning voltage; static measurement; varactor capacity; Capacitance; Capacitance measurement; Mathematical model; Pulse measurements; Time measurement; Varactors; Voltage measurement; Ferroelectric; Modeling; Nonlinear Distortion; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium (RWS), 2011 IEEE
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-7687-9
Type
conf
DOI
10.1109/RWS.2011.5725427
Filename
5725427
Link To Document