• DocumentCode
    2676586
  • Title

    Memory effects in ferroelectric thick film varactors based on Barium Strontium Titanate

  • Author

    Maune, H. ; Sazegar, M. ; Zheng, Y. ; Jakoby, R.

  • Author_Institution
    Microwave Eng., Tech. Univ. Darmstadt, Darmstadt, Germany
  • fYear
    2011
  • fDate
    16-19 Jan. 2011
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    Low cost planar ferroelectric thick film varactors based on Barium Strontium Titanate (BST) are realized and their nonlinear behavior with varying DC bias is investigated. A model for the capacitance tunability is utilized for nonlinear simulations and compared to measurements. The model based on static measurement of the varactor´s capacity is extended by the results from measurements with pulsed tuning voltage. A memory effect in the capacitance tunability of the varactor is observed in measurements with pulsed bias voltage. The impact of this memory effect to the nonlinear properties is presented.
  • Keywords
    barium compounds; ferroelectric capacitors; strontium compounds; thick film devices; varactors; BST; barium strontium titanate; capacitance tunability; memory effects; nonlinear simulations; planar ferroelectric thick film varactors; pulsed tuning voltage; static measurement; varactor capacity; Capacitance; Capacitance measurement; Mathematical model; Pulse measurements; Time measurement; Varactors; Voltage measurement; Ferroelectric; Modeling; Nonlinear Distortion; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium (RWS), 2011 IEEE
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-7687-9
  • Type

    conf

  • DOI
    10.1109/RWS.2011.5725427
  • Filename
    5725427