• DocumentCode
    2676590
  • Title

    Monolithic Microwave Integrated GaAs FET Oscillators

  • Author

    Ye Yukang ; Wang Fuchen

  • fYear
    1982
  • fDate
    15-17 June 1982
  • Firstpage
    289
  • Lastpage
    290
  • Abstract
    The analysis by means of three-port S-parameters shows that larger output power can be obtained from GaAa MESFET oscillator at their source ports rather than at their drains. An output power of 40 mW was measured at 8.2 GHz on a finished monolithic oscillator with 15% efficiency and 300 µm gate-width.
  • Keywords
    Frequency; Gallium arsenide; Impedance; Inductance; MESFETs; Microwave FETs; Microwave devices; Microwave oscillators; Power generation; Reflection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1982 IEEE MTT-S International
  • Conference_Location
    Dallas, TX, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1982.1130693
  • Filename
    1130693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2676590