A terahertz imaging receiver in 0.13μm SiGe BiCMOS technology

This paper presents an integrated THz imaging receiver in bulk 0.13μm SiGe technology. The receiver, based on direct power detection, achieves a peak responsivity of 2.6MV/W and 700kV/W and a NEP of 8.7pW/√Hz and 32.4 pW/√Hz at 0.25 THz and 0.3 THz, respectively. No external silicon lens or post-processing, such as substrate thinning, was employed for improving antenna gain, efficiency and reducing power loss in substrate modes. To the best of the authors´ knowledge, this is the lowest reported NEP in silicon at THz frequencies, without the use of expensive post-processing or external silicon lens.