Measurements of near terahertz conductivity of doped silicon using a high quality factor resonant cavity

Author

Kirley, Matt ; Yang, Ben ; Willis, Keely ; Weber, Marcus ; Sule, Nishant ; Hagness, Susan ; Knezevic, Irena ; Booske, John

Author_Institution

ECE Dept., Univ. of Wisconsin-Madison, Madison, WI, USA

fYear

2011

fDate

2-7 Oct. 2011

Firstpage

1

Lastpage

1

Abstract

The conductivity of doped silicon is measured at 400 and 650 GHz. Measurements are performed using a high quality factor, semi-confocal resonant cavity. Data is presented which contradicts conventional theory (Drude model) and in agreement with a multiphysics computational model being developed at UW-Madison.

Keywords

Q-factor; cavity resonators; electrical conductivity; elemental semiconductors; high-frequency effects; silicon; Drude model; Si; UW-Madison model; doped silicon; frequency 400 GHz; frequency 650 GHz; high quality factor resonant cavity; multiphysics computational model; semiconfocal resonant cavity; terahertz conductivity measurements; Conductivity; Conductivity measurement; Predictive models; Semiconductor device measurement; Semiconductor device modeling; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on

Conference_Location

Houston, TX

ISSN

2162-2027

Print_ISBN

978-1-4577-0510-6

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/irmmw-THz.2011.6105218

Filename

6105218