• DocumentCode
    267911
  • Title

    Increased thermal conductivity polycrystalline diamond for low-dissipation micromechanical resonators

  • Author

    Najar, H. ; Thron, A. ; Yang, Chao ; Fung, S. ; van Benthem, K. ; Lin, Li-Chiun ; Horsley, David A.

  • Author_Institution
    Univ. of California, Davis, Davis, CA, USA
  • fYear
    2014
  • fDate
    26-30 Jan. 2014
  • Firstpage
    628
  • Lastpage
    631
  • Abstract
    This paper reports an investigation of microcrystalline diamond (MCD) films deposited under different conditions to increase thermal conductivity and therefore mechanical quality factor (Q) in micromechanical resonators. Through a study of different deposition conditions, we demonstrate a three-fold increase in thermal conductivity and quality factor. Quality factor measurements were conducted on double ended tuning fork resonators, showing Q = 241,047 at fn = 246.86 kHz after annealing, the highest Q reported for polycrystalline diamond resonators. We further present a study of the unique microstructure of hot filament chemical vapor deposition (HFCVD) diamond films and relate growth conditions to observed microstructural defects.
  • Keywords
    annealing; chemical vapour deposition; crystal microstructure; diamond; micromechanical resonators; thermal conductivity; thin films; vibrations; C; HFCVD diamond films; MCD film deposition; annealing; double ended tuning fork resonators; hot filament chemical vapor deposition diamond films; low-dissipation micromechanical resonators; mechanical quality factor; microcrystalline diamond film deposition; micromechanical resonators; microstructural defects; polycrystalline diamond resonators; quality factor measurements; thermal conductivity polycrystalline diamond; Conductivity; Diamonds; Films; Q-factor; Resonant frequency; Silicon; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2014.6765719
  • Filename
    6765719