A bulk-controlled temperature and power supply independent CMOS voltage reference

Author

Testa, L. ; Lapuyade, H. ; Cimino, M. ; Deval, Y. ; Carbonero, J.L. ; Begueret, J.B.

Author_Institution

IMS Lab., Bordeaux

fYear

2008

fDate

22-25 June 2008

Firstpage

109

Lastpage

112

Abstract

A temperature and supply voltage independent voltage reference is presented. The design is carried out using the STM 65 nm CMOS process. An analytical study is carried out to show the feasibility to adjust the temperature independent output voltage controlling the biasing of the bulk of one transistor. A feedback is introduced in order to do so. Post-layout simulations confirm the analytical results. The circuit works with a 0.9 V supply voltage and a total power consumption of 27 muW. A temperature coefficient as low as 9 ppm in the temperature range [-50degC;+200degC] is obtained when the bulk is connected to the ground. The output voltage variation for a supply voltage sweep between 0.9 V and 1.25 V is 8.6 mV.

Keywords

CMOS integrated circuits; reference circuits; CMOS process; CMOS voltage reference; post-layout simulations; power 27 muW; power consumption; reference circuits; size 65 nm; temperature coefficient; temperature independent output voltage; voltage 0.9 V; voltage 1.25 V; voltage 8.6 mV; Analytical models; CMOS process; Circuit simulation; Energy consumption; Feedback; Land surface temperature; Power supplies; Temperature control; Temperature distribution; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on

Conference_Location

Montreal, QC

Print_ISBN

978-1-4244-2331-6

Electronic_ISBN

978-1-4244-2332-3

Type

conf

DOI

10.1109/NEWCAS.2008.4606333

Filename

4606333