An electret-biased resonant radiation sensor

Author

Seung Seob Lee ; Chang Keun Yoon ; Seung Hyun Song ; Ziaie, Babak

Author_Institution

Birck Nanotechnol. Center, West Lafayette, IN, USA

fYear

2014

fDate

26-30 Jan. 2014

Firstpage

704

Lastpage

708

Abstract

Resonance-based microcantilevers have been widely explored for various sensing applications. Subjecting the cantilever to an electrets-generated electrostatic field allows for self-resonant sensing of ionizing radiation. This paper reports the development of the resonant radiation sensor consisting of a ZnO microcantilever and a Teflon electret. The electrostatic force generated by the electric field shifts the self-resonant frequency of the cantilever. For a 125 (L), 55 (W), and 4 (T) μm (length) cantilever, the sensor displayed a sensitivity of 24.24Hz/Gy when exposed to 2Gy of gamma radiation.

Keywords

II-VI semiconductors; cantilevers; electrets; electric sensing devices; electrostatics; gamma-rays; micromechanical devices; wide band gap semiconductors; zinc compounds; Teflon electret; ZnO; electret-biased sensor; electrets-generated electrostatic field; electric field shifts; electrostatic force; gamma radiation; ionizing radiation; resonance-based microcantilevers; resonant radiation sensor; self-resonant frequency; self-resonant sensing; Electrets; Electrostatics; Force; Ionizing radiation; Resonant frequency; Sensitivity; Surface impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/MEMSYS.2014.6765738

Filename

6765738