Electret-based low power resonator for robust pressure sensor

Author

Mitsuya, H. ; Ashizawa, H. ; Sugiyama, Takatoshi ; Kumemura, Momoko ; Ataka, M. ; Fujita, Hideaki ; Hashiguchi, Gen

Author_Institution

Saginomiya Seisakusho, Inc., Saitama, Japan

fYear

2014

fDate

26-30 Jan. 2014

Firstpage

717

Lastpage

720

Abstract

We have developed a membrane-less pressure sensor based on squeeze-film damping in a 2-μm driving/sensing gap of a silicon ring-shaped resonator. Its sensing range is from sub-atmospheric to over 1MPa; very wide-range pressure measurement is possible with one sensor element. An electret film having the 200-V-bias voltage was incorporated to the resonator; this allows the excitation of the resonator at very low AC voltage. This membrane-less pressure sensor has robust and low power consumption (nW-range) characteristics.

Keywords

damping; electrets; elemental semiconductors; low-power electronics; pressure measurement; pressure sensors; resonators; silicon; thin film sensors; Si; distance 2 mum; driving-sensing gap; electret film; electret-based low power resonator; power consumption; pressure measurement; robust membrane-less pressure sensor; silicon ring-shaped resonator; squeeze-film damping; voltage 200 V; Damping; Electrets; Electrodes; Films; Resonant frequency; Robustness; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/MEMSYS.2014.6765741

Filename

6765741