Compact modeling of magnetic tunnel junction

A new compact model of a magnetic tunnel junction (MTJ) is presented in this paper. This model is intended to describe the behavior of a MTJ and to take the magnetic as well as the non-linear electronic transport phenomena into account. It should be suitable for circuits simulation and thus, it must be simple (no finite element approach, analytical current versus voltage characteristic only). For this purpose, some assumptions are made. The MTJ model is separated in two entities. The first one concerns the magnetization of a ferromagnetic thin film. The other focuses on the electrical conduction of a MTJ. Both models are implemented and coupled in VHDL-AMS in order to obtain the compact model of a MTJ, which is parameterized with 25 values (19 physical parameters and 6 semi-empirical ones). The first simulations are encouraging. They allow to retrieve classical results on MTJ and to predict interesting behaviors.