A 60GHz, 13 dBm fully integrated 65nm RF-CMOS power amplifier

Author

Aloui, Sofiane ; Kerhervé, Eric ; Belot, Didier ; Plana, Robert

Author_Institution

IMS Lab., Bordeaux Univ., Talence

fYear

2008

fDate

22-25 June 2008

Firstpage

237

Lastpage

240

Abstract

A 65 nm CMOS, 60 GHz fully integrated power amplifier (PA) from STMicroelectronics has been designed for low cost Wireless Personal Area Network (WPAN). It has been optimized to deliver the maximum linear output power (OCP1) without using parallel amplification topology. The simulated OCP1 is equal to 8.9 dBm with a gain of 8 dB. To obtain good performances and consume an ultra compact area of silicon, the PA has been matched and optimized with a mixed technique, using lumped and distributed elements. The chip size is 0.48 mm*0.6 mm including pads.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; personal area networks; RF-CMOS power amplifier; STMicroelectronics; distributed elements; frequency 60 GHz; lumped elements; maximum linear output power; millimetre wave power amplifiers; parallel amplification topology; size 65 nm; wireless personal area network; Breakdown voltage; CMOS technology; Costs; Cutoff frequency; Degradation; HDTV; OFDM modulation; Power amplifiers; Power generation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008. 2008 Joint 6th International IEEE Northeast Workshop on

Conference_Location

Montreal, QC

Print_ISBN

978-1-4244-2331-6

Electronic_ISBN

978-1-4244-2332-3

Type

conf

DOI

10.1109/NEWCAS.2008.4606365

Filename

4606365