DocumentCode
2679736
Title
Design and Performance of K-Band Power GaAs FETs on Matched Carriers
Author
Rosenheck, L. ; Dow, S. ; Berglund, C. ; Stevens, M.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
270
Lastpage
272
Abstract
Experimental relationships between the gain of K-band GaAs power FETs and the device geometries. Output powers as high as 1100mW with 4.3dB associated gain at 20.2 GHz have been measured. Matched carrier performance on both fused silica and sapphire is described.
Keywords
Circuits; Doping; FETs; Gallium arsenide; K-band; Laboratories; Packaging; Power amplifiers; Power generation; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130881
Filename
1130881
Link To Document