DocumentCode
2679800
Title
GaAs MESFET Oscillator Design Using Large-Signal S-Parameters
Author
Gilmore, R.J. ; Rosenbaum, F.J.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
279
Lastpage
281
Abstract
A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
Keywords
Circuit stability; Circuit topology; FETs; Frequency; Gallium arsenide; Impedance; MESFETs; Oscillators; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130884
Filename
1130884
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