• DocumentCode
    2679875
  • Title

    Doppler: DPL-aware and OPC-friendly gridless detailed routing with mask density balancing

  • Author

    Yen-Hung Lin ; Yong-Chan Ban ; Pan, D.Z. ; Yih-Lang Li

  • fYear
    2011
  • fDate
    7-10 Nov. 2011
  • Firstpage
    283
  • Lastpage
    289
  • Abstract
    The printed image of a layout that satisfies the double patterning lithograph (DPL) constraints may not have good fidelity if the layout neglects optical proximity correction (OPC). Simultaneously considering DPL and OPC becomes necessary when gene rating layouts, especially in routing stage. Moreover, one decomposed design with balanced mask density has a lower edge placement error (EPE)than an unbalance done[6]. This work proposes a comprehensive conflict graph (CCG)to enable detailed routers to simultaneously consider DPL, OPC, and mask density to gene rate litho-friendly layouts. This work then develops an DPL-aware and OPC-friendly gridless detailed routing (DOPPLER) by applying CCG in a gridless routing model. A density variation threshold annealing-based routing flow is also proposed to prevent DOPPLER from falling into a sub-optimal mask density balance. Compared with existing DPL-aware detailed routing works, DOPPLER demonstrates an average 73.84% of EPE hotspot reduction with a satisfactory mask density at the cost of an average increase of 0.08% wire-length, 15.14% number of stitches, and 77.28% runtime.
  • Keywords
    circuit layout; graph theory; masks; network routing; photolithography; proximity effect (lithography); DOPPLER; OPC-friendly gridless detailed routing; comprehensive conflict graph; density variation threshold annealing-based routing flow; double patterning lithograph constraints; edge placement error hotspot reduction; gridless routing model; litho-friendly layout rating; mask density balancing; optical proximity correction; Annealing; Color; Doppler effect; Interference; Layout; Routing; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2011 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Print_ISBN
    978-1-4577-1399-6
  • Electronic_ISBN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2011.6105343
  • Filename
    6105343