Fully monolithic and ultra-compact NEMS-CMOS self-oscillator based-on single-crystal silicon resonators and low-cost CMOS circuitry

Author

Philippe, Julien ; Arndt, Gregory ; Colinet, E. ; Savoye, Mylene ; Ernst, Thomas ; Ollier, E. ; Arcamone, J.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

26-30 Jan. 2014

Firstpage

1071

Lastpage

1074

Abstract

We report on the first experimental demonstration of a self-oscillator based on a single-crystal silicon NEMS resonator monolithically co-integrated with a CMOS circuitry. The latter, composed only by seven transistors, is manufactured with a very low-cost 0.35μm technology. The NEMS-CMOS self-oscillator pixel is as small as 50×70 μm² (pads excluded) and can oscillate near 8MHz. In this paper are described the NEMS-CMOS oscillator characteristics and the implementation method of the self-oscillating loop.

Keywords

CMOS integrated circuits; crystal resonators; nanoelectromechanical devices; radiofrequency oscillators; resonators; NEMS resonator; Si; fully monolithic NEMS-CMOS self-oscillator; self-oscillating loop; single crystal silicon resonator; size 0.35 mum; size 50 mum; size 70 mum; ultracompact NEMS-CMOS self-oscillator; CMOS integrated circuits; CMOS technology; Electronic circuits; Nanoelectromechanical systems; Oscillators; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/MEMSYS.2014.6765830

Filename

6765830