DocumentCode
2680367
Title
3D four- three- two-photon and multi-harmonic microscopy of lateral-over-grown GaN
Author
Tseng, Chien-Hung ; Chu, Shi-Wei ; Sun, Chi-Kuang ; Fini, Paul ; DenBaars, Steven P.
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
Complete formation regarding the distribution of growth quality, defect state, and piezoelectric field in lateral-over-grown GaN can be obtained simultaneously through multi-photon (4 and 3) and multi-harmonic (3 and 2) microscopy.
Keywords
III-V semiconductors; defect states; gallium compounds; optical microscopy; piezoelectricity; semiconductor epitaxial layers; semiconductor growth; surface structure; two-photon processes; 3D four-photon microscopy; 3D three-photon microscopy; 3D two-photon microscopy; GaN; defect state; growth quality; lateral-over-grown GaN; multi-harmonic microscopy; piezoelectric field; Absorption; Distributed computing; Fluorescence; Gallium nitride; Laser excitation; Low earth orbit satellites; Luminescence; Microscopy; Piezoelectric materials; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1276971
Filename
1276971
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