DocumentCode
2680924
Title
20 GHz High Power IMPATT Transmitter
Author
Ngan, Y.C. ; Chan, J. ; Sun, C.
fYear
1983
fDate
May 31 1983-June 3 1983
Firstpage
487
Lastpage
488
Abstract
The development of a 20 GHz proof-of-concept (POC) high power solid state transmitter sponsored by NASA Lewis Research Center and USAF Space Division is described. The transmitter utilizes GaAs INPATT diodes for high power output and high efficiency, and operates in the constant-voltage injection-locked mode to achieve high dc-to-rf conversion efficiency. The transmitter is a three-stage design consisting of a single-diode driver, a dual-cliode intermediate driver, and a twelve-diode rectangular waveguide power combiner in the output stage to achieve 29 dB gain and 16 W power output.
Keywords
Circulators; Coaxial components; Diodes; Gallium arsenide; Impedance; NASA; Power amplifiers; Power generation; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1983.1130956
Filename
1130956
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