DocumentCode
2681340
Title
1.3 μm-range GaInNAsSb VCSELs with high temperature operation
Author
Ikenaga, Y. ; Shimizu, H. ; Setiagung, C. ; Ariga, M. ; Sato, T. ; Hama, T. ; Kumada, K. ; Haga, Y. ; Iwai, N. ; Kasukawa, A.
Author_Institution
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
1.3 μm GaInNAsSb based VCSELs with improved active region structure are reported. By changing the active region, maximum lasing temperature of over 105°C and single mode output power at 85°C of 0.35 mW were obtained.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor device measurement; semiconductor lasers; surface emitting lasers; thermo-optical effects; 0.35 mW; 1.3 mum; 85 degC; GaInNAsSb; VCSEL; active region structure; high temperature operation; lasing temperature; single mode output power; Regions; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277042
Filename
1277042
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