• DocumentCode
    2681346
  • Title

    Noise Perfomance of Microwave HEMT

  • Author

    Joshin, K. ; Mimura, T. ; Ninori, M. ; Yamashita, Y. ; Kosemura, K. ; Saito, J.

  • fYear
    1983
  • fDate
    May 31 1983-June 3 1983
  • Firstpage
    563
  • Lastpage
    565
  • Abstract
    Low noise HEMTs (High Electron Mobility Transistors) with 0.5µm gate have been made using direct electron beam lithography. At 12 GHz a noise figure of 1.4 dB with an associated gain of 11 dB has been obtained at room temperature. Noise figure has been reduced to 0.35 dB by decreasing ambient temperature to 100K.
  • Keywords
    Frequency; Gallium arsenide; Gold; HEMTs; Metallization; Noise figure; Noise measurement; Semiconductor device measurement; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1983 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1983.1130984
  • Filename
    1130984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2681346