DocumentCode
2681429
Title
Narrow ridge-waveguide multi-layer InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range
Author
Lin, G. ; Chen, I.F. ; Chi, J.Y.
Author_Institution
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
We have demonstrated high-performance multi-layer (2, 5 and 10) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm with narrow ridge-waveguide structure. Simultaneous ground-state and excited-state losing emissions well above threshold was observed and their spectral evolution was also investigated.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.3 mum; InAs-InGaAs-GaAs; InAs/InGaAs/GaAs quantum dot lasers; excited-state losing emission; ground-state losing emission; narrow ridge-waveguide multilayer; spectral evolution; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser theory; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277047
Filename
1277047
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