DocumentCode
2682308
Title
Fibre-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode
Author
Kim, K.M. ; Kim, M. ; Cha, J.H. ; Kim, J.H. ; Kwon, Y.S.
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
2
fYear
2003
fDate
15-19 Dec. 2003
Abstract
An AlAs/GaAs/Al0.3Ga0.7As heterostructure on a GaAs substrate has been directly bonded on a fiber-optic plate for the first attempt of the 3rd generation transmission photocathode. The substrate is removed mechanically and etched chemically, utilizing high etching selectivities of GaAs and AlAs in potassium citrate/citric acid. The bonding strength between fiber optic and GaAs wafer exceeds 5.7 MPa without annealing, the final GaAs/Al0.3Ga0.7As structure on the fiber optic allows large dimension (1 cm × 1 cm), thin (2 μm) and uniform film thickness, and good transmission performance.
Keywords
III-V semiconductors; aluminium compounds; etching; gallium arsenide; optical fibres; photocathodes; semiconductor devices; semiconductor thin films; wafer bonding; 2 mum; 3rd generation transmission photocathode; 5.7 MPa; AlAs-GaAs-Al0.3Ga0.7As; AlAs/GaAs/Al0.3Ga0.7As heterostructure; GaAs; GaAs substrate; GaAs wafer; GaAs/Al0.3Ga0.7As structure; bonding strength; chemical etching; etching selectivities; fibre-optic plate bonded Al0.3Ga0.7As/GaAs transmission photocathode; mechanical removal; potassium citrate/citric acid; transmission performance; uniform film thickness; Annealing; Cathodes; Etching; Gallium arsenide; Glass; Optical fibers; Rough surfaces; Substrates; Surface morphology; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN
0-7803-7766-4
Type
conf
DOI
10.1109/CLEOPR.2003.1277098
Filename
1277098
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