DocumentCode
2682881
Title
Parallel Feedback FETDRO Design Using 3-Port S-Parameters
Author
Khanna, A.
fYear
1984
fDate
May 30 1984-June 1 1984
Firstpage
181
Lastpage
183
Abstract
A new approach for the design of parallel feedback FET oscillators has been presented using 3-Port S parameters. The linear analysis accurately determines the reflection gain at any port as a function of the parameters of the dielectric resonator parallel feedback network between the other two ports of the FET. An example of design and practical realization of FETDRO is presented at 9 GHz.
Keywords
Dielectrics; Feedback; Microstrip resonators; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Reflection; Scattering parameters; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1984 IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1984.1131731
Filename
1131731
Link To Document