Session 18: FET Modeling and Novel Structures

Rapid performance advances continue to be made at microwave frequencies with amplifiers, mixers, that use field effect transistors as their active element. Significant progress has been made in modeling these devices for determining the accurate equivalent circuit element values for GaAs FETs. First three papers in this session report the progress in modeling of the GaAs FETs for determining the equivalent circuit elements values which serves as an invaluable aid for device diagnostics and for the development of amplifiers, mixers, etc.