DocumentCode
2684411
Title
Class-E power amplifier optimization for operation above maximum frequency
Author
Jee, Seunghoon ; Moon, Junghwan ; Kim, Jungjoon ; Son, Junghwan ; Kim, Bumman
Author_Institution
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear
2011
fDate
7-9 Nov. 2011
Firstpage
1
Lastpage
5
Abstract
The optimized Class-E power amplifier (PA) for operation above the maximum frequency is described. We have found that the performance of the Class-E PA above the maximum frequency can be enhanced by the bifurcated current through saturation. The performance of the Class-E PA can be further improved by the inductive second harmonic tuning and power matched fundamental load. The resulting saturated amplifier delivers higher output power and efficiency because of the tuned load and the proper second harmonic voltage component generated by the second harmonic load matching. A highly efficient saturated amplifier is designed using Cree GaN HEMT CGH40010 device at 3.5 GHz. It provides a drain efficiency of 75.8% at a saturated power of 40.2 dBm (10.5W).
Keywords
circuit optimisation; high electron mobility transistors; microwave power amplifiers; Cree GaN HEMT CGH40010 device; bifurcated current; class-E power amplifier optimization; drain efficiency; frequency 3.5 GHz; highly efficient saturated amplifier; inductive second harmonic tuning; maximum frequency; power 10.5 W; power matched fundamental load; saturated amplifier; second harmonic load matching; second harmonic voltage component; HEMTs; Harmonic analysis; Load modeling; Power generation; Power system harmonics; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2011 IEEE International Conference on
Conference_Location
Tel Aviv
Print_ISBN
978-1-4577-1692-8
Type
conf
DOI
10.1109/COMCAS.2011.6105777
Filename
6105777
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