DocumentCode
2684908
Title
Simulation study for the CDM ESD behaviour of the grounded-gate NMOS
Author
Russ, C. ; Verhaege, K. ; Bock, K. ; Groeseneken, G.E. ; Maes, H.E.
Author_Institution
IMEC
fYear
1996
fDate
1996
Firstpage
1739
Lastpage
1742
Keywords
Automatic testing; Biological system modeling; Bipolar transistors; Delay effects; Electrostatic discharge; Humans; MOS devices; Power dissipation; Protection; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888205
Filename
888205
Link To Document