DocumentCode
2684922
Title
Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors
Author
Musshoff, C. ; Wolf, H. ; Giesew, H. ; Eggew, P. ; Guggenmos, X.
Author_Institution
Technical University of Munich
fYear
1996
fDate
1996
Firstpage
1743
Lastpage
1746
Keywords
Biological system modeling; Capacitance; Circuit testing; Electrostatic discharge; Fingers; Humans; Integrated circuit modeling; Integrated circuit testing; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888206
Filename
888206
Link To Document