DocumentCode
2685400
Title
Simulation of the gate burnout of GaAs MESFET
Author
Vashchenko, V.A. ; Martynov, J B ; Sinkevitch, V.F. ; Tager, A.S.
Author_Institution
SRI PULSAR
fYear
1996
fDate
1996
Firstpage
1887
Lastpage
1890
Keywords
Avalanche breakdown; Electric breakdown; Gallium arsenide; MESFETs; Metallization; Numerical simulation; Optical buffering; Optical microscopy; Pulse measurements; Two dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN
0-7803-3369-1
Type
conf
DOI
10.1109/ESREF.1996.888238
Filename
888238
Link To Document