• DocumentCode
    2686136
  • Title

    Improvement of power integrity with novel segmented power bus structures in RF/digital SOP

  • Author

    Li, Jun ; Wan, Lixi ; Gao, Wei ; Liao, Cheng

  • Author_Institution
    Inst. of Electromagn., Southwest Jiaotong Univ., Chengdu
  • fYear
    2008
  • fDate
    28-31 July 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    With the voltage decreasing in power distribution network (PDN) in system-on-packages (SOPs), power integrity will be a critical issue. The cavity resonance modes between power and ground planes can be excited by simultaneous switching noise (SSN) or ground bounce noise (GBN) [1], [2]. To cut down the noise from susceptible devices, isolation techniques are necessary. In this paper, two novel structures combine segmented method and embedded capacitor provided isolation performances from 0.7 GHz to 10 GHz below -40 dB. The novel structures with a bridge for suppressing noise in high frequency and a thin high K dielectric substrate for decreasing the SSN in the entire frequency band. And they were better in performance and simpler in configuration than Electromagnetic Band Gap (EBG) and other isolation structures. Moreover, the analytical process could be a guidance to find better structures for improving the noise isolation.
  • Keywords
    distribution networks; interference suppression; photonic band gap; system-in-package; dielectric substrate; electromagnetic band gap; frequency 0.7 GHz to 10 GHz; ground bounce noise; isolation techniques; noise suppression; power bus structures; power distribution network; power integrity; simultaneous switching noise; system-on-packages; Bridge circuits; Capacitors; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Periodic structures; Power systems; Radio frequency; Resonance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-2739-0
  • Electronic_ISBN
    978-1-4244-2740-6
  • Type

    conf

  • DOI
    10.1109/ICEPT.2008.4606977
  • Filename
    4606977